S30C50 Datasheet | Mospec Semiconductor

MOSPEC S30C30 thru S30C60 Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model In pliance with EU Ro Hs 2002/95/EC directives MAXIMUM RATINGS Characteristic Symbol S30C Unit 30 35 40 45 50 60 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM 30 35 40 45 50 60 RMS Reverse Voltage VR(RMS) 21 25...