SR108 Datasheet | Mospec Semiconductor

features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction. ＊Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ＊Moisture Sensitivity Level: MSL-1 ＊In pliance with EU Ro Hs 2002/95/EC directives The marking is indicated by part no. with. “M”. ex:SR107M~SR1100M MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol SR107 SR108 SR109 SR1100 Unit VRRM VRWM 70 80 90 100 V VR(RMS) IO 1.0 A IFSM 25 A TJ , TSTG -65 to +150 ℃ ELECTRIAL CHARACTERISTICS Characteristic Symbol SR107 SR108 SR109 SR1100 Unit Maximum Instantaneous Forward Voltage ( IF =1 Amp ) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃ ) ( Rated DC Voltage, TC = 125℃ ) Maxmum Thermal Resistance Junction to case VF IR Rthj C 0.75 0.85 0.5 20 60 V m A ℃/W Typical Junction Capacitance ( Reverse Voltage of 4 volts & f=1 MHz ) 60 PF SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70-100 VOLTS DO-41 MILLIMETERS DIM MIN MAX A 2.00...