SRAF0535 - (SRAF0530 - SRAF0560) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

This page provides the datasheet information for the SRAF0535, a member of the SRAF0530 (SRAF0530 - SRAF0560) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers family.

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity.
Guarantee Reverse Avalanche. www. DataSheet4U. com.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
125¢J Operating Junction Temperature.
Low Stored Charge Majority Carrier Conduction.

Mospec Semiconductor

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Datasheet Details

Part number	SRAF0535
Manufacturer	Mospec Semiconductor
File Size	215.17 KB
Description	(SRAF0530 - SRAF0560) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Datasheet	SRAF0535 Datasheet
Additional preview pages of the SRAF0535 datasheet.

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Other Datasheets by Mospec Semiconductor

SRAF0530 - (SRAF0530 - SRAF0560) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF05100 - (SRAF0570 - SRAF05100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0540 - (SRAF0530 - SRAF0560) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0545 - (SRAF0530 - SRAF0560) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0550 - (SRAF0530 - SRAF0560) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0560 - (SRAF0530 - SRAF0560) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0570 - (SRAF0570 - SRAF05100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0580 - (SRAF0570 - SRAF05100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Full PDF Text Transcription

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MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers …Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. www.DataSheet4U.com * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 125¢J Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.

Published: Jul 30, 2008 |