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SRAF08100 - Dual Schottky Barrier Power Rectifiers

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
  • Low Forward Voltage.
  • Low Switching noise.
  • High Current Capacity.
  • Guarantee Reverse Avalanche.
  • Guard-Ring for Stress Protection.
  • Low Power Loss & High efficiency.
  • 125 Operating Junction Temperature.
  • Low Stored Charge Majority Carrier Conduction.
  • Plastic Material.

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Datasheet preview – SRAF08100

Datasheet Details

Part number SRAF08100
Manufacturer Mospec Semiconductor
File Size 260.52 KB
Description Dual Schottky Barrier Power Rectifiers
Datasheet download datasheet SRAF08100 Datasheet
Additional preview pages of the SRAF08100 datasheet.

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Full PDF Text Transcription

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MOSPEC SRAF0870 thru SRAF08100 Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 125 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.
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