SRAF0860 Datasheet | Mospec Semiconductor

features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. - Low Forward Voltage. - Low Switching noise. - High Current Capacity - Guarantee Reverse Avalanche. - Guard-Ring for Stress Protection. .. - Low Power Loss & High efficiency. - 125¢J Operating Junction Temperature - Low Stored Charge Majority Carrier Conduction. - Plastic Material used Carries Underwriters Laboratory SRAF0830 thru SRAF0860 SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 30-60 VOLTS ITO-220AC MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol 30 VRRM VRWM VR VR(RMS) IF(AV) 30 35 35 SRAF08 40 40 45 45 50 50 60 60 V Unit 28 8 IFSM TJ , TSTG -65 to +125 ¢J A B C D E F G H I J K L M N P O Q MILLIMETERS MIN MAX 15.05 15.15 13.35 13.45 10.00 10.10 6.55 6.65 2.65 2.75 1.55 1.65 1.15 1.25 0.55 0.65 2.50 2.60 3.00 3.20 1.10 1.20 0.55 0.65 4.40 4.60 1.15 1.25 2.65 2.75 3.35 3.45 3.15 3.25 ELECTRIAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage ( IF =8 Amp TC = 25¢J ) ( IF =8 Amp TC = 125¢J ) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25¢J ) ( Rated DC Voltage, TC = 125¢J ) Symbol 30 VF 35 SRAF08 40 45 50 60 V Unit 0.55 0.48 0.65 0.57 1.0 30 m A SRAF0830 thru SRAF0860 FIG-1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT (Amp.) NSTANTANEOUS FORWARD CURRENT (Amp.) FIG-2 TYPICAL FORWARD CHARACTERISITICS SRAF0830-SRAF0845 SRAF0850-SRAF0860...