SRAF10100 - (SRAF1070 - SRAF10100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

This page provides the datasheet information for the SRAF10100, a member of the SRAF1070 (SRAF1070 - SRAF10100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers family.

Datasheet Summary

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity.
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection. www. DataSheet4U. com.
Low Power Loss & High efficiency.
125¢J Operating Junction Temperature.
Low Stored Charge Majority Carrier Conduction.

Mospec Semiconductor

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Datasheet Details

Part number	SRAF10100
Manufacturer	Mospec Semiconductor
File Size	184.45 KB
Description	(SRAF1070 - SRAF10100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Datasheet	SRAF10100 Datasheet
Additional preview pages of the SRAF10100 datasheet.

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Full PDF Text Transcription

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MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers …Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. www.DataSheet4U.com * Low Power Loss & High efficiency. * 125¢J Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.

Published: Jul 30, 2008 |