SRAF10100 Datasheet | Mospec Semiconductor

features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. - Low Forward Voltage. - Low Switching noise. - High Current Capacity - Guarantee Reverse Avalanche. - Guard-Ring for Stress Protection. .. - Low Power Loss & High efficiency. - 125¢J Operating Junction Temperature - Low Stored Charge Majority Carrier Conduction. - Plastic Material used Carries Underwriters Laboratory SRAF1070 thru SRAF10100 SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 70-100 VOLTS ITO-220AC MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol 70 VRRM VRWM VR VR(RMS) IF(AV) 70 SRAF10 80 80 90 90 100 100 V Unit 56 10 IFSM TJ , TSTG -65 to +125 ¢J A B C D E F G H I J K L M N P O Q MILLIMETERS MIN MAX 15.05 15.15 13.35 13.45 10.00 10.10 6.55 6.65 2.65 2.75 --1.00 1.15 1.25 0.55 0.65 4.80 5.20 3.00 3.20 1.10 1.20 0.55 0.65 4.40 4.60 1.15 1.25 2.65 2.75 3.35 3.45 3.15 3.25 ELECTRIAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage ( IF =10 Amp TC = 25¢J ) ( IF =10 Amp TC = 125¢J ) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25¢J ) ( Rated DC Voltage, TC = 125¢J ) Symbol 70 VF 0.75 0.70 SRAF10 80 90 0.80 0.68 100 V Unit 1.0 50 m A SRAF1070 thru SRAF10100 FIG-1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT (Amp.) NSTANTANEOUS FORWARD CURRENT (Amp.) FIG-2 TYPICAL FORWARD CHARACTERISITICS SRAF1070,SRAF1080 SRAF1090,SRAF10100 .. CASE TEMPERATURE (¢J...