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SRF2030CE - Full Plastic Dual Schottky Barrier Power Rectifiers

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
  • Low Forward Voltage.
  • Low Switching noise.
  • High Current Capacity.
  • Guarantee Reverse Avalanche.
  • Guard-Ring for Stress Protection.
  • Low Power Loss & High efficiency.
  • 150 Operating Junction Temperature.
  • Low Stored Charge Majority Carrier Conduction.
  • Plastic Material.

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Datasheet Details

Part number SRF2030CE
Manufacturer Mospec Semiconductor
File Size 72.62 KB
Description Full Plastic Dual Schottky Barrier Power Rectifiers
Datasheet download datasheet SRF2030CE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSPEC SRF2030CE Thru SRF2060CE Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.