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SRF3060 - (SRF3030 - SRF3060) Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers

Download the SRF3060 datasheet PDF. This datasheet also covers the SRF3030 variant, as both devices belong to the same (srf3030 - srf3060) switchmode full plastic dual schgottky barrier power rectifiers family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
  • Low Forward Voltage.
  • Low Switching noise.
  • High Current Capacity.
  • Guarantee Reverse Avalanche.
  • Guard-Ring for Stress Protection.
  • Low Power Loss & High efficiency.
  • 125¢J Operating Junction Temperature.
  • Low Stored Charge Majority Carrier Conduction.
  • Plastic Materi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SRF3030_MospecSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SRF3060
Manufacturer Mospec Semiconductor
File Size 236.18 KB
Description (SRF3030 - SRF3060) Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers
Datasheet download datasheet SRF3060 Datasheet

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Other Datasheets by Mospec Semiconductor

Part Number Description
SRF30100 (SRF3070 - SRF30100) Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers
SRF30100CE (SRF3070CE - SRF30100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRF30120C Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers
SRF30150C Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers
SRF3030 (SRF3030 - SRF3060) Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 125¢J Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.