SRF3090 Datasheet | Mospec Semiconductor

MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. - Low Forward Voltage. - Low Switching noise. - High Current Capacity - Guarantee Reverse Avalanche. - Guard-Ring for Stress Protection. - Low Power Loss & High efficiency. - 125¢J Operating Junction Temperature - Low Stored Charge Majority Carrier Conduction. - Plastic Material used Carries Underwriters Laboratory SRF3070 Thru SRF30100 SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 70-100 VOLTS ITO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR),TC=100¢J Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol 70 VRRM VRWM VR VR(RMS) IF(AV) 70 80 80 SRF30 90 90 100 100 V Unit 56 15 30 30 IFSM TJ , TSTG -65 to +125 ¢J ELECTRIAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage ( IF =15 Amp TC = 25¢J ) ( IF =15 Amp TC = 125¢J ) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25¢J ) ( Rated DC Voltage, TC = 125¢J ) w w w .d e e h s a t a . u t4 m o c Symbol 70 VF 0.75 0.68 80 SRF30 90 0.85 0.72...