Click to expand full text
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 125¢J Operating Junction Temperature Low Stored Charge Majority Carrier Conduction.