1N825A
1N825A is TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V/ 400 mW manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-pensated Zener Reference Diodes
Temperature-pensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram (approx.) MOUNTING POSITION: Any Maximum Ratings Junction Temperature:
- 55 to +175°C Storage Temperature:
- 65 to +175°C DC Power Dissipation: 400 m W @ TA = 50°C WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Phoenix, Arizona
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
TEMPERATUREPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 m W
CASE 299 DO-204AH GLASS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. VZ = 6.2 V ± 5%- @ IZT = 7.5 m A) (Note 5)
Maximum Voltage Change ∆VZ (Volts) (Note 1) Ambient Test Temperature °C ±1°C Temperature Coefficient For Reference Only %/°C (Note 1) Maximum Dynamic Impedance ZZT Ohms (Note 2)
JEDEC Type No.
1N821 1N823 1N825
1N827 1N829
0.096 0.048 0.019
0.009 0.005
- 55, 0, +25, +75, +100
0.01 0.005 0.002
0.001 0.0005
1N821A 1N823A 1N825A
1N827A 1N829A
0.096 0.048 0.019
0.009 0.005
0.01 0.005 0.002
0.001 0.0005
- Tighter-tolerance units available on special request.
Motorola TVS/Zener Device Data
6.2 Volt OTC 400 m W DO-35 Data Sheet 8-159
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE
(with IZT = 7.5 m A ±0.01 m A) (See Note 3) 1N821 through 1N829
25 1N821,A 20 15 1N823,A 10 25 1N825,A 1N827,A 0 1N829,A 1N827,A
- 25
- 50 ∆VZ =
- 31 m V 1N825,A
- 10 1N823,A
-...
