Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5460/D
JFET Amplifiers
P- Channel
- Depletion
3 GATE
2 DRAIN
2N5460 thru 2N5462
1 SOURCE
MAXIMUM RATINGS
Rating Drain
- Gate Voltage Reverse Gate
- Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8
- 65 to +135
- 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C
1 2 3
CASE 29- 04, STYLE 7 TO- 92 (TO- 226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate
- Source Breakdown Voltage (IG = 10 µAdc,...
