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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAS16WT1/D
Silicon Switching Diode
3 CATHODE 1 ANODE
BAS16WT1
Motorola Preferred Device
3
MAXIMUM RATINGS (TA = 25°C)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IR IFM(surge) PD Max 75 200 500 200 1.6 Unit V mA mA mW mW/°C
1 2
CASE 419–02, STYLE 2 SC–70/SOT–323
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RθJA Max 0.
BAS16WT1 Datasheet
