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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC337/D
Amplifier Transistors
NPN Silicon
COLLECTOR 1
BC337,-16,-25,-40 BC338,-16,-25,-40
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
45 25 50 30
5.0 800 625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watt 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.
BC338 Datasheet
