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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC372/D
High Voltage Darlington Transistors
NPN Silicon
COLLECTOR 3 BASE 2
BC372 BC373
1 2
EMITTER 1
3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg BC372 100 100 12 1.0 625 5.0 1.5 12 –55 to +150 BC373 80 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
BC373 Datasheet
