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BCX70GLT1 - General Purpose Transistors

Key Features

  • uits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon T J(pk) = 150 °C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will red.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCX70GLT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc BCX70GLT1 BCX70JLT1 BCX70KLT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.