BD789 - Complementary Plastic Silicon Power Transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	BD789
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	176.26 KB
Description	Complementary Plastic Silicon Power Transistors
Datasheet	BD789 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
BD787	Complementary Plastic Silicon Power Transistors
BD788	Complementary Plastic Silicon Power Transistors
BD776	Plastic Darlington Complementary Silicon Power Transistors
BD777	Plastic Darlington Complementary Silicon Power Transistors
BD778	Plastic Darlington Complementary Silicon Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD789/D Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD789, BD790 VCEO(sus) = 100 Vdc (Min) — BD791, BD792 • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.