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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF392/D
High Voltage Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
BF392 BF393
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BF392 250 250 6.0 500 625 5.0 1.5 12 – 55 to +150 BF393 300 300 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
BF392 Datasheet
