Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N- Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
CASE 318
- 08, STYLE 10 SOT- 23 (TO
- 236AB)
MAXIMUM RATINGS
Rating Drain
- Source Voltage Gate
- Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc Vdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417
- 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W...
