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BFS17LT1 - RF TRANSISTOR NPN SILICON

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Part number BFS17LT1
Manufacturer Motorola Inc
File Size 52.61 KB
Description RF TRANSISTOR NPN SILICON
Datasheet download datasheet BFS17LT1 Datasheet
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    MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BFS17LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. • T1 suffix indicates tape and reel packaging of 3,000 units per reel. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Maximum Junction Temperature Symbol VCEO VCBO TJmax Value 15 25 150 Unit Vdc Vdc °C BFS17LT1 RF TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C (1) Storage Temperature Thermal Resistance Junction to Ambient (1) Symbol PD Tstg RθJA Max 350 2.
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