BSS123LT1 Overview
VGS(th) rDS(on) gfs 0.8 80 5.0 2.8 6.0 Vdc Ω mmhos The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width 300 ms, Duty Cycle 2.0%. FR 5 = 1.0 0.75 0.062 in.
| Part number | BSS123LT1 |
|---|---|
| Datasheet | BSS123LT1_MotorolaInc.pdf |
| File Size | 93.12 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS FET Transistor |
|
|
|
VGS(th) rDS(on) gfs 0.8 80 5.0 2.8 6.0 Vdc Ω mmhos The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width 300 ms, Duty Cycle 2.0%. FR 5 = 1.0 0.75 0.062 in.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| BSS123LT1 | Power MOSFET | ON Semiconductor | |
| BSS123LT1G | N-Channel Power MOSFET | ON Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|