BSS123LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSS123LT1/D
TMOS FET Transistor
N- Channel
3 DRAIN 1 GATE 2 SOURCE
Motorola Preferred Device
®
MAXIMUM RATINGS
Rating Drain- Source Voltage Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM
3 1 2
Value 100 ± 20 ± 40 0.17 0.68
Unit Vdc Vdc Vpk Adc CASE 318
- 08, STYLE 21 SOT- 23 (TO
- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(3) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA TJ, Tstg 556
- 55 to +150 Unit m W m W/°C °C/W °C
DEVICE MARKING
BSS123LT1 = SA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain- Source Breakdown Voltage (VGS = 0, ID = 250 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25°C TJ = 125°C Gate-...
