BSS123LT1 Description
VGS(th) rDS(on) gfs 0.8 80 5.0 2.8 6.0 Vdc Ω mmhos The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width 300 ms, Duty Cycle 2.0%. FR 5 = 1.0 0.75 0.062 in.
BSS123LT1 is TMOS FET Transistor manufactured by Motorola Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| BSS123LT1 | Power MOSFET | |
| BSS123LT1G | N-Channel Power MOSFET |
VGS(th) rDS(on) gfs 0.8 80 5.0 2.8 6.0 Vdc Ω mmhos The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width 300 ms, Duty Cycle 2.0%. FR 5 = 1.0 0.75 0.062 in.