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BUX85 - 2 AMPERES POWER TRANSISTOR

Key Features

  • VCEO(sus) 450 V.
  • VCES(sus) 1000 V.
  • Fall time = 0.3 µs (typ) at IC = 1.0 A.
  • VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A BUX85 2.

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUX85/D SWITCHMODE NPN Silicon Power Transistors The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems. SPECIFICATIONS FEATURES: • VCEO(sus) 450 V • VCES(sus) 1000 V • Fall time = 0.3 µs (typ) at IC = 1.0 A • VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.