M1MA142KT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA141KT1/D Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC- 70 package which is designed for low power surface mount applications. - Fast trr, < 3.0 ns - Low CD, < 2.0 p F - Available in 8 mm Tape and Reel Use M1MA141/2KT1 to order the 7 inch/3000 unit reel. Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel. M1MA141KT1 M1MA142KT1 Motorola Preferred Devices CATHODE 3 SC- 70/SOT- 323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V- 100 m A SURFACE MOUNT ANODE NO CONNECTION 1 2 1 2 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA141KT1 M1MA142KT1 Peak Reverse Voltage M1MA141KT1 M1MA142KT1 Forward Current Peak Forward Current Peak Forward Surge Current IF IFM IFSM(1) VRM Symbol VR Value 40 80 40 80 100 225 500 m Adc m Adc m Adc Vdc Unit Vdc CASE 419- 02, STYLE 2 SC- 70/SOT- 323 THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 - 55 ~ + 150 Unit m W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current M1MA141KT1 M1MA142KT1 Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit Thermal Clad is a trademark of the Bergquist pany Preferred devices are Motorola remended choices for future use and best overall value. Symbol IR Condition VR = 35 V VR = 75 V Min - - - 40 80 Max 0.1 0.1 1.2 - - 2.0 3.0 Unit µAdc VF VR IF = 100 m A IR = 100 µA Vdc Vdc CD trr(2) VR = 0, f = 1.0 MHz IF = 10 m A, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR - - p F ns REV 2 Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc....