M4N37 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N37/D M4N37 6-Pin DIP Optoisolators Transistor Output The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Current Transfer Ratio 100% Minimum @ Specified Conditions Guaranteed Switching Speeds Meets or Exceeds All JEDEC Registered Specifications Applications General...