MRF373ALR1 Overview
NOT REMENDED FOR NEW DESIGN NOT REMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon source amplifier applica- tions in 28/32 volt...
MRF373ALR1 Key Features
- Integrated ESD Protection
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal
- Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
- RoHS pliant
- In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel
- 860 MHz, 75 W, 32 V LATERAL N
- CHANNEL
- 05, STYLE 1 NI