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MRF374A - RF POWER FIELD EFFECT TRANSISTOR

General Description

0.8 pF Chip Capacitor, B Case, ATC 2.2 pF Chip Capacitor, B Case, ATC 0.5 5.0 pF Variable Capacitor, Johanson Gigatrim 47 pF Chip Capacitors, B Case, ATC 1.0 pF Chip Capacitor, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 100,000 pF Chip Capacitors, B Case, ATC 15 pF Chip Capacitors, B Ca

Key Features

  • RL 0 400 20 900 400 500 600 700 800 900 500 600 700 800 f,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF374A/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical Two–Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power — 130 Watts PEP Power Gain — 17.3 dB Efficiency — 41% IMD — –32.