MRF5S21150R3 Key Features
- a s s A B f o r P C N - P C S / c e
- a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1
- Part: MRF5S21150R3
- Manufacturer: Motorola Semiconductor
- Size: 556.96 KB
Related Motorola Semiconductor Datasheets
| Part Number | Description |
|---|---|
| MRF5S21150SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF373ALR1 | RF Power Field Effect Transistors |
| MRF373ALSR1 | RF Power Field Effect Transistors |
| MRF374A | RF POWER FIELD EFFECT TRANSISTOR |
| MRF9002R2 | RF Power Field Effect Transistor Array |
MRF5S21150R3 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.