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MRF5S21150R3 - RF POWER FIELD EFFECT TRANSISTORS

General Description

22 µF, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 µF, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 µF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Value, P/N or DWG TAJE226M035R 100B6R8CW 100B1R8BW 1812Y2

Key Features

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  • ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW.
  • IM3 @ 3.84 MHz BW.
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  • 10.
  • 5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW Freescale Semiconductor, Inc f,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg.