Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PBF259/D
High Voltage Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
PBF259 PBF259S
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg PBF259,S 300 300 5.0 500 625 5.0 1.5 12
- 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C
1 2 3
CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance,...
