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TP3006 - RF POWER TRANSISTOR

Key Features

  • input and output matching networks and high impedances. It can easily operate in a full 870.
  • 960 MHz bandwidth in a simple circuit.
  • Class AB Operation.
  • Specified 26 Volts, 960 MHz Characteristics Output Power.
  • 5 Watts Gain.
  • 9 dB min Efficiency.
  • 45% min.
  • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. TP3006 5 W, 870.
  • 960 MHz RF POWER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3006/D NPN Silicon RF Power Transistor The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features input and output matching networks and high impedances. It can easily operate in a full 870– 960 MHz bandwidth in a simple circuit. • Class AB Operation • Specified 26 Volts, 960 MHz Characteristics Output Power — 5 Watts Gain — 9 dB min Efficiency — 45% min • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.