Download TP3006 Datasheet PDF
TP3006 page 2
Page 2
TP3006 page 3
Page 3

TP3006 Key Features

  • Class AB Operation
  • Specified 26 Volts, 960 MHz Characteristics Output Power
  • 5 Watts Gain
  • 9 dB min Efficiency
  • 45% min
  • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ
  • 960 MHz RF POWER TRANSISTOR NPN SILICON
  • Continuous Storage Temperature Range Operating Junction Temperature Total Device Dissipation @ TC = 25°C Derate above 25
  • 40 to +100 200 25 0.14 Unit Vdc Vdc Vdc Adc °C °C Watts W/°C CASE 319-07, STYLE 2
  • 4 Vdc Vdc Vdc mA

TP3006 Description

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3006/D NPN Silicon RF Power Transistor The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.