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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSB709–RT1/D
PNP General Purpose Amplifier Transistor Surface Mount
COLLECTOR 3
MSB709-RT1
Motorola Preferred Device
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc
MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value – 60 – 45 – 7.0 –100 – 200
CASE 318D–03, STYLE 1 SC–59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Emitter Breakdown Voltage (IC = – 2.
MSB709-RT1 Datasheet
