MRF7S19100NR1 Overview
Freescale Semiconductor Technical Data Document Number: 1, 6/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.
MRF7S19100NR1 Key Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Designed for Digital Predistortion Error Correction Systems
- 200°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- 1990 MHz, 29 W AVG., 28 V SINGLE W