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MRF7S19100NR1 - RF Power Field Effect Transistors

Description

10 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 8.2 pF Chip Capacitors 10 pF Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number T491D106K035AT GRM55DR61H106KA88L 600B5R1BT250XT 600B8R2BT250XT 600B100BT250XT CRCW

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Designed for Digital Predistortion Error Correction Systems.
  • 200°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MRF7S19100NR1 MRF7S19100NBR1 1930 - 1990 MHz, 29 W AVG. , 28 V.

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Datasheet preview – MRF7S19100NR1

Datasheet Details

Part number MRF7S19100NR1
Manufacturer Motorola Semiconductor
File Size 576.61 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF7S19100NR1 Datasheet
Additional preview pages of the MRF7S19100NR1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 1, 6/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 30% Device Output Signal PAR — 6.1 dB @ 0.
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