1N1199B Overview
Key Specifications
Key Features
- High Current Surge 250 Amperes @ TJ = 200°C
- Peak Performance at Elevated Temperature 12 Amperes @ TC = 150°C
| Part | 1N1199B |
|---|---|
| Description | SILICON RECTIFIERS |
| Manufacturer | Motorola Semiconductor |
| Size | 73.76 KB |
Pricing from 65.5101 USD, available from DigiKey and Newark.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| DigiKey | 0 | 100+ : 65.5101 USD | View Offer |
| Newark | 0 | 100+ : 65.51 USD 500+ : 62.99 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 1N1199B | Digitron Semiconductors | SILICON POWER RECTIFIER |
| 1N1199A | International Rectifier | MEDIUM POWER SILICON RECTIFIER DIODES |
| 1N1199A | Diotec Semiconductor | Silicon-Power Rectifiers |
| 1N1199A | Vishay | Medium Power Silicon Rectifier Diodes |
| 1N1199AR | GeneSiC | Silicon Standard Recovery Diode |