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1N1200 - SILICON RECTIFIERS

Download the 1N1200 datasheet PDF. This datasheet also covers the 1N1199 variant, as both devices belong to the same silicon rectifiers family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (1N1199-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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lN1199 thru lN1206 ® MOTOROLA MEDIUM-CURRENT SILICON RECTIFIERS Silicon rectifiers for medium-current applications requiring: • High Current Surge 240 Amperes @ TJ = 190°C • Peak Performance at Elevated Temperature 12 Amperes @ TC = 150°C I I L-________________________________________~ "MAXIMUM RATINGS Characteristic Symbol IN 1199 IN 1200 IN 1202 IN 1204 IN 1206 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 Volts 100 200 400 600 Average Rectified Forward Current (Single phase, resistive load, 60 Hz, TC= 150°C) 10 Amp 12 Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase, 60 Hz) IFSM Amp - 2 4 0 (for 1 cycle)- Operating Junction Temperature Range TJ - 6 5 t o + I