Datasheet4U Logo Datasheet4U.com

1N2171 - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

This page provides the datasheet information for the 1N2171, a member of the 1N2163 TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES family.

📥 Download Datasheet

Datasheet preview – 1N2171

Datasheet Details

Part number 1N2171
Manufacturer Motorola
File Size 130.89 KB
Description TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
Datasheet download datasheet 1N2171 Datasheet
Additional preview pages of the 1N2171 datasheet.

📁 Similar Datasheet

  • 1N217 - (1N200 - 1N222) General Purpose Diodes (International Semiconductor)
  • 1N210 - (1N200 - 1N222) General Purpose Diodes (International Semiconductor)
  • 1N211 - (1N200 - 1N222) General Purpose Diodes (International Semiconductor)
  • 1N212 - (1N200 - 1N222) General Purpose Diodes (International Semiconductor)
  • 1N2128A - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
  • 1N2128A - Power Silicon Rectifier Diodes (Vishay)
  • 1N2128A - Silicon Standard Recovery Diode (America Semiconductor)
  • 1N2128A - Standard Recovery Diode (Naina Semiconductor)
  • 1N2128A - Silicon Standard Recovery Diode (GeneSiC)
  • 1N2128AR - Silicon Standard Recovery Diode (America Semiconductor)
Other Datasheets by Motorola
  • 1N2171A - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
  • 1N2170 - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
  • 1N2170A - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
  • 1N2163 - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
  • 1N2163A - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
  • 1N2164 - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
  • 1N2164A - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
  • 1N2165 - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

Full PDF Text Transcription

Click to expand full text
1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable reference sources utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case. • Low Dynamic Impedance • Choice of Three Temperature Ranges • "Box Method" Specifications Guarantee Maximum Voltage De- viation. Temperature compensated reference diodes are made by taking advantage of the differing thermal characteristics of forward and reverse biased silicon PN junctions. A forward biased junction has a negative temperature coefficient of approximately 2.0 millivoltsfC. Reverse biased junctions above 5.
Published: |