1N2171
1N2163 thru 1N2171 (SILICON) l N2163A thru l N2171A l N3580, A, Bthru l N3583, A, B
TEMPERATURE-PENSATED ZENER REFERENCE DIODES
Highly reliable reference sources utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case.
- Low Dynamic Impedance
- Choice of Three Temperature Ranges
- "Box Method" Specifications Guarantee Maximum Voltage De- viation.
Temperature pensated reference diodes are made by taking advantage of the differing thermal characteristics of forward and reverse biased silicon PN junctions. A forward biased junction has a negative temperature coefficient of approximately 2.0 millivoltsf C. Reverse biased junctions above 5.0 volts have a positive temperature coefficient and therefore it is possible by judicious selection of binations of forward and reverse biased junctions to obtain a device that shows a very low temperature coefficient due to cancellation. Because of the differing...
