1N4388 - Silicon varactor diode

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	1N4388
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	98.90 KB
Description	Silicon varactor diode
Datasheet	1N4388 Datasheet

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Full PDF Text Transcription (Reference)

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1N4388 (SILICON) (MV1806) CASE 44 (00·4) Silicon varactor diode for high-frequency harmonic generation applications. cathode connected to stud MAXIMUM RATINGS Rating Reverse Voltage Forward Current RF Power Input Total Device Dissipation @ TC = 75°C Derate above 75° C Operating and Storage Junction Temperature Range Symbol VR IF P.m PD T J , T stg Value 100 1.0 25 10 0.10 Unit Vdc Amp Watts Watts W;OC -65 to +175 °c ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 !lAdc) Reverse Current (VR =75Vde) (VR =75Vde, T A =150°C) Diode Capacitance (VR = 6.0 Vde, f =l.OMHz) (VR =90Vde, f=l.OMHz) Series Resistance (VR = 6.