1N4388
1N4388 is Silicon varactor diode manufactured by Motorola Semiconductor.
1N4388 (SILICON)
(MV1806)
CASE 44
(00- 4)
Silicon varactor diode for high-frequency harmonic generation applications. cathode connected to stud
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
RF Power Input Total Device Dissipation @ TC = 75°C
Derate above 75° C
Operating and Storage Junction Temperature Range
Symbol
VR IF P.m PD
T J , T stg
Value
100 1.0 25 10 0.10
Unit
Vdc Amp Watts Watts W;OC
-65 to +175
°c
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 !l Adc)
Reverse Current (VR =75Vde) (VR =75Vde, T A =150°C)
Diode Capacitance (VR = 6.0 Vde, f =l.OMHz) (VR =90Vde, f=l.OMHz)
Series Resistance (VR = 6.0 Vdc, f = 50 MHz)
Symbol
BVR IR
- RS
Figure of Merit (VR = 10 Vdc, f = 50 MHz)
(VR = 90 Vdc, f = 50 MHz)
FUNCTIONAL TESTS
Power Output Efficiency
Doubler Circuit (Figure 1) Pin = 20 W, fin = 500 MHz, fout = 1000 MHz
P...
