1N5823 Datasheet | Motorola Semiconductor

® MOTOROLA IN5823,lN5824 IN5825 MBRS82S,H, H1 Designers Data Sheet HOT CARRIER POWER RECTIFIERS - .. employing the Schottky Barrier principle in a large area metal- to-silicon power diode. State-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes. - Extremely Low vF - High Surge Capacity - Low Stored Charge, Majority - TX Version Available - Carrier Conduction Low Power Loss/ High Efficiency Designer's Data for ~'Worst Case" Conditions The Designers Data sheets permit the design of most circuits...