20N40CL Overview
SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MGP20N40CL/D Advanced Information SMARTDISCRETES IGBT ™ MGP20N40CL Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT).
20N40CL Key Features
- Temperature pensated Gate-Drain Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
- Low Saturation Voltage
- High Pulsed Current Capability 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT Vce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED)
- Continuous @ TC = 25°C Reversed Collector Current
- pulse width Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 12 150 3.5
- 55 to 175 Unit Vdc Vdc Vdc Adc Apk Watts kV °C
- Gate-Emitter Operating and Storage Temperature Range
- Junction to Case
