Motorola 2N1021
PNP germanium powertransistorsfor
MAXIMUM RATINGS
(TC =250C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating Junction and storage Temperature Range Total Device Diss~ation @ TC = 250 C Derate above 25 C Symbol VCB VCEX VCEO VEB Ie 2N1021 100 2N1022 120 Unit Volts 100 120 Volts 50 Volts 30 Volts 5.0 Amp TJ , Tstg PD -65 to +110 85 1.0 °c Watts W/oC @TA @Tc 5 100 85 4 80 3 60 2.6 2 40 20 o oo POWER●TEMPERATURE DERATING CURVE Tc ---~ _IA -- -~ ----=- ~ - ~ ~ 25 50 75 100 110 125 TEMPERATURE (Oe) 2-151 2Nl021, 2Nl022 (continued)ELECTRICAL CHARACTERISTICS
(TC = 250 CJlntess.otllerwise noted) Characteristic Collector-Base Cutoff Current (VCB = 50 Vdc) (VCB = 60 Vdc) (VCB = 100 Vde) (VCB = 120 Vde) (VCB= 50 Vdc, TC = + 55°C) (VCB = 60 Vdc, TC = + 55°C) 2Nl021 2Nl022 2Nl021 2Nl022 2Nl021 2Nl022 Collector-Emitter Breakdown Voltage* (Ie = 200 mAde) .Symbll Mill Mu Ualt leBO mAdc - 0.5 - 0.5 - 2.0 - 2.0 - 8.0 - 8.0 - BVCEO*...