This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N1163 |
|---|---|
| Datasheet | 2N1163 2N1162 Datasheet (PDF) |
| File Size | 203.18 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | PNP germanium power transistors |
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2N 1162 thru 1167 2N (GERMANIUM) 2N1162A thru 2Nl167A PNP germanium power transistors for switching and amplifier applications in high reliability equipment. BVCES Emitter Cutoff Current (V EB = 12 V, IC = 0) lEBO DC Forward Current Gain (VCE = I V, IC = 25 A) (VCE = 2 V, IC = 5 A) Collector- Emitter Saturation Voltage (IC = 25 A, IB = I. 6 AI hFEI hFE VCE(sat) Base-Emitter Saturation Voltage (IC = 25 A, IB =.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N1163A | PNP germanium power transistors |
| 2N1162 | PNP germanium power transistors |
| 2N1162A | PNP germanium power transistors |
| 2N1164 | PNP germanium power transistors |
| 2N1164A | PNP germanium power transistors |
| 2N1165 | PNP germanium power transistors |
| 2N1165A | PNP germanium power transistors |
| 2N1166 | PNP germanium power transistors |
| 2N1166A | PNP germanium power transistors |
| 2N1167 | PNP germanium power transistors |
