2N1187 Datasheet | Motorola Semiconductor

2N1175 FOR SPECIFICATIONS, SEE 2N1413-2N1415 DATA. 2N1185 thru 2N1188(GERMANIUM) PNP germanium transistors for high-gain audio amplifier and switching applications. CASE 31 (1) (TO-5) All leads isolated from case MAXIMUM RATINGS Rating Collector-Base Voltage 2N1l85 2N1l86 -2N1l88 Collector-Emitter Voltage 2N1l85 2N1186-2N1188 Emitter-Base Voltage Collector Current - (Continuous) Storage and Operating Temperature Collector Dissipation in, Ambient (Derate 2.67 m W/o C above 25°C) Thermal Resistance Junction to Ambient Thermal Resistance (Junction to Case) - Limited by power dissipation Symbol VCER VEB IC Tstg' TJ PD (JJA (JJC Value 45 60 30 45 30 500- -65 to +100 200 Unit Vdc Vdc Vdc m Adc °c m W °C/m W °C/m W 2-173 2N 1185 thru 2N 1188 (continued) ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted) Characteristic Collector-Base Cutoff Current (V CB = 30 V, IE = 0) (VCB = 45 V, IE = 0) (V CB = 60 V, IE = 0) (VCB=10V,IE=0,TA=+71°C) 2N1185 2N1186 thru 2N1188 2N1186 thru 2N1188 All...