2N1925 Datasheet | Motorola Semiconductor

2N1924 thru 2N1926 (GERMANIUM) CASE 31(1) (TO-5) Base connected to case PNP germanium transistors for general purpose, lowfrequency applications. Characteristics curves similar to 2N524-2N527 series. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Power Dissipation at 25°C Ambient Symbol VCB VCEO VEB IC TJ & Tstg Value 60 40 25 500 -65 to +100 225 Unit Vdc Vdc Vdc m Adc °c m W ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted) Characteristics Collector Cutoff Current VCS = -45 Vdc, IE = 0 Symbol Min ICBO - Emitter Cutoff Current VEB = -25 Vdc, IC = 0 l EBO - Collector-Base Voltage IC = 200 /LAdc, IE = 0 VCBO Collector-Emitter Voltage IC = 50/LAdc, VBE = +l. 5 Vdc, RBE = 10 K Collector-Emitter Voltage IC = 0.6 m Adc, RBE = 10 K VCEX VCER Punch-Thru Voltage (VEB = 1 Vdc, VTVM Z 2.1 Megohm) Vpt Max 10...