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2N1970 Datasheet PDF

Motorola 2N1970

PNP germanium power transistors

Part No. 2N1970
Datasheet 2N1970 Download
Manufacturer
Motorola
Description PNP germanium power transistors
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2N1970 datasheet page 1 preview

MAXIMUM RATINGS

Rating Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Symbol vCB VCEO VEB 2N1970 100 50 40 2N1980 50 30 20 2N1981 70 40 20 Collector Current IC Power Dissipation at TC = 250 C PD Junction Temperature Range TJ IS 170 -65 to +110

ELECTRICAL CHARACTERISTICS

(TA = 2SOC unless otherwise noted) Characteristic Symbol Min Collector- Base Cutoff Current (VCB = -100 Vdc) 2N1970 ICBO - (VCB =-50 Vdc) 2NI980 - (VCB ,-70Vdc) 2NI981 - (VCB = -90 Vdc) 2NI982 - (VCB = -2 Vdc) 2N1980-2N1982 - Emitter-Base Cutoff Current (VEB = -40 Vdc) (VEB = - 20 Vdc) (VEB = - 2 Vdc) 2NI970 lEBO - 2N1980-2N1982 - 2N1980-2N1982 - Collector-Emitter Breakdown Voltage (IC = lAde, IB = 0) Baae- Emitter Voltage (VCE = -2 Vdc, IC = 5 Adc) 2NI970 2NI980 2NI981 2NI982 2NI970 BV CEO 50 30 40 50 VBE - Emitter Floating Potential (VCB = -50 Vdc) (VCB = -70 Vdc) (VCB = -90 Vdc) 2NI980 2NI981 2NI982 VEBF - - - Collector-Emitter Saturation Voltage (IC = 12 Adc, IB = 2 Adc) (IC =5 Adc, IB = 0.5...