• Part: 2N1983
  • Description: NPN silicon annular small-signal transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 96.00 KB
Download 2N1983 Datasheet PDF
2N1983 page 2
Page 2

Datasheet Summary

1983 2N (SILICON) 2N1984 NPN silicon annular small-signal transistor. CASE 31 (TO- 5) Collector connected to cas. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @TA = 25° C Derate above 25°C Total Device Dissipation@ TC = 25°C Derate above 25° C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO Vdc Vdc Vdc Adc Watt 4.8 mW/oC Watts 16 mW/oC TJ , T stg -65 to +150 °c THERMAL CHARACTERISTICS Characteristic...