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1983 2N
(SILICON)
2N1984
NPN silicon annular small-signal transistor.
CASE 31
(TO·5) Collector connected to cas.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @TA = 25° C
Derate above 25°C
Total Device Dissipation@ TC = 25°C
Derate above 25° C Operating and Storage Junction
Temperature Range
Symbol Value Unit
VCEO
25
Vdc
VCB
50
Vdc
VEB
5.0
Vdc
IC
1.0
Adc
PD
0.6
Watt
4.8
mW/oC
PD
2.0
Watts
16
mW/oC
TJ , T stg -65 to +150 °c
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction to Case
8JC
62.5
Thermal Resistance, Junction to Ambient
8JA
208
Unit
°C/W °C/W
2-231
2N1983, 2N1984 (continued)
= ELECTRICAL CHARACTERISTICS (T.