2N1991 - PNP SILICON ANNULAR TRANSISTORS

This page provides the datasheet information for the 2N1991, a member of the 2N1131 PNP SILICON ANNULAR TRANSISTORS family.

Motorola

📥 Download Datasheet

Datasheet Details

Part number	2N1991
Manufacturer	Motorola
File Size	136.81 KB
Description	PNP SILICON ANNULAR TRANSISTORS
Datasheet	2N1991 Datasheet
Additional preview pages of the 2N1991 datasheet.

📁 Similar Datasheet

2N1991 - Bipolar PNP Device (Seme LAB)
2N1990 - Small Signal Transistors (Central Semiconductor)
2N1902 - NPN Transistor (SSDI)
2N1904 - NPN Transistor (SSDI)
2N1909 - Phase Control SCR (Powerex Power)
2N1909 - Silicon Controlled Rectifiers (Microsemi)
2N1909 - 110A RMS SCR (International Rectifier)
2N1910 - Phase Control SCR (Powerex Power)
2N1910 - Silicon Controlled Rectifiers (Microsemi)
2N1911 - Phase Control SCR (Powerex Power)

Other Datasheets by Motorola

2N1990 - NPN silicon transistor
2N1924 - PNP Transistor
2N1925 - PNP Transistor
2N1926 - PNP Transistor
2N1959 - NPN Transistor
2N1970 - PNP germanium power transistors
2N1980 - PNP germanium power transistors
2N1981 - PNP germanium power transistors

Full PDF Text Transcription

Click to expand full text

2N 1131 (SILl.CON) 2N1131JAN AVAILABLE 2Nl131A 2N1991 PNP SILICON ANNULAR TRANSISTORS · .. designed for medium-speed switching and amplifier applications where low DC current gain is essential. • Low DC Current Gain - hFE =45 (Max) @ IC = 150 mAdc - 2N1131,A • Turn-On Time - ton = 45 ns (Max) - 2N 1131A • Turn-Off Time - toff = 35 ns (Max) - 2N1131A *MAXIMUM RATINGS Rating Symbol Cpllector·Emitter Voltage Collector·Emitter Voltage Collector·Ba•• Voltage Emitter·Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC Derate above 250 e Total Device Dissipation@Te= 250 e @TC=I000C Derate above 25°C VeEO VeER VeB VEB Ie Po Po Operating Junction Temperature Range Storage Temperature Range TJ T.tg 2N1131 2N1131A 2N1991 35 40 20 50 50 - 50 60 30 5.0 5.

Published: Nov 8, 2018 |