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2N2242 (SILICON)
CASE 22
(TO·1S)
NPN silicon annular transistors designed for highspeed, low-power saturated switching applications.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Total Device Dissipation @' TA -= 25° C
Derate above 25° C Junction Temperature - Operating Storage Temperature Range
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
5.0 k 5.0k
Symbol
Value
Unit
VCEO VCB VEB IC PD
T.T T stg
15 40 5.0 225 360 2.0 -65 to +200 -65 to +200
+ 3.0 v (Vee)
Vdc Vdc Vdc mAdc mWatts mW/oC
°c °c
30
;
-
240 -.JV
I'
v--
.
0.1 I1_F
_....u----1..---O
seOPE
z ~ 100 k
PULSE WIDTH 96 ns 51
PRR 120 Hz
t ...Q!!.
VBB = -4.
2N2242 Datasheet
