2N2303 Overview
designed for medium-current switching and amplifier applications. ~--tW11 0.210 .500 n n O.016 DIA u-1. OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage'CU (IC.
| Part number | 2N2303 |
|---|---|
| Datasheet | 2N2303-Motorola.pdf |
| File Size | 134.15 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | PNP SILICON ANNULAR TRANSISTORS |
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designed for medium-current switching and amplifier applications. ~--tW11 0.210 .500 n n O.016 DIA u-1. OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage'CU (IC.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2N2303 | Small Signal Transistors | Central Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N2322 | All-diffused PNPN thyristors |
| 2N2323 | All-diffused PNPN thyristors |
| 2N2324 | All-diffused PNPN thyristors |
| 2N2325 | All-diffused PNPN thyristors |
| 2N2326 | All-diffused PNPN thyristors |
| 2N2330 | NPN Transistor |
| 2N2331 | NPN Transistor |
| 2N2357 | PNP Germanium power transistors |
| 2N2358 | PNP Germanium power transistors |
| 2N2359 | PNP Germanium power transistors |