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2N722 (SILICON)
(2N1132 JAN AVAILABLE)
2Nl132 2Nl132A 2N2303
PNPSILICON SWITCHING TRANSISTORS
PNP SILICON ANNULAR TRANSISTORS ... designed for medium-current switching and amplifier applications.
MAXIMUM RATINGS
Rating
Symbol 2N722 2N1132 2N1132A 2N2303 Unit
Collector-Emitter Voltage
VCEO 35
35
40
35
Vdc
Collector-Emitter Voltage (RBE • 10 Ohms)
VCER 50
50
50
Vdc 50
Collector-Base Voltage
VCB
50
Emitter-Base Voltage Collector Current
VEB 5.0
IC
-
T~~~a~:~~v~;:j~atlon @TA = 25°C PD
400 2.67
Total Device Dissipation@Tc=2SoC PD
1.5
Derate above 25° C
10
Operating Junction Temperature
TJ
Range
Storage Temperature Range
.Tstg
50
60
5.0
5.0
-
600
600
600
4.0
4.0
2.0
2.0
13.3
13.3
-65 to +175
-65 to +300
50
Vdc
5.0
Vdc
500
mAde
600
mW
4.