2N2368 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | 2N2368 |
|---|---|
| Datasheet | 2N2368-Motorola.pdf |
| File Size | 165.67 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | SWITCHING TRANSISTOR |
|
|
Tstg 0.36 2.06 1.2 6.85 .68 6.85 - 65 to + 200 (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown VoltageO) (IC = 10 mAdc, Vbe = 0) Collector-Emitter Breakdown Voltage C(l = 10,nA, V B e = 0) Collector-Emitter Sustaining.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N2368 | Silicon Planar Epitaxial NPN Transistor | STMicroelectronics |
 |
2N2368 | Bipolar NPN Device | Seme LAB |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N2369 | Switching Transistors |
| 2N2369A | Switching Transistors |
| 2N2303 | PNP SILICON ANNULAR TRANSISTORS |
| 2N2322 | All-diffused PNPN thyristors |
| 2N2323 | All-diffused PNPN thyristors |
| 2N2324 | All-diffused PNPN thyristors |
| 2N2325 | All-diffused PNPN thyristors |
| 2N2326 | All-diffused PNPN thyristors |
| 2N2330 | NPN Transistor |
| 2N2331 | NPN Transistor |
