Motorola 2N2382
PNP germanium epitaxial mesa transistors
| Part No. | 2N2382 |
|---|---|
| Datasheet | 2N2382 Download |
| Manufacturer |  Motorola |
| Description | PNP germanium epitaxial mesa transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA ; 25°C Derate above 25°C Total Device Dissipation @ TC ; 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N2381 2N2382 VCEO VCB VEB IC PD PD TJ , Tstg 15 20 30 45 4.0 4.0 500 300 4.0 750 10 -65 to + 100 Unit Vdc Vdc Vdc mAdc mW mW/oC mW mW/oC °c FIGURE 1 - ACTIVE REGION TIME CONSTANT FIGURE 2 - TOTAL CONTROL CHARGE 4 JTJ 25°C g.,'"., 3000 ::> ~ o ~ 1000 TJ = 25°C ~I=IO I, / /' ./ ~ " - ......... """ - ....-~".,.. '~" 700 :i "'" ~ 500 e1 ~ 300 <.) g~ .... J /' ~ 100 30 50 70 100 300 500 1.0 3.0 5.0 7.0 10.0 30.0 50.0 Ie. COLLECTOR CURRENT (mAde) I,. BASE CURRENT (mAde) 2-292 2N2381, 2N2382 (Continued)ELECTRICAL CHARACTERISTICS
(TA = 250 C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IE = 0) 2N2381 2N2382 Collector-Base Breakdown Voltage (Ic =...
