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2N2382 - PNP germanium epitaxial mesa transistors

Download the 2N2382 datasheet PDF. This datasheet also covers the 2N2381 variant, as both devices belong to the same pnp germanium epitaxial mesa transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2381-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N2381 PNP germanium epitaxial mesa transistors
2N2303 PNP SILICON ANNULAR TRANSISTORS
2N2322 All-diffused PNPN thyristors
2N2323 All-diffused PNPN thyristors
2N2324 All-diffused PNPN thyristors

Full PDF Text Transcription

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2N2381 (GERMANIUM) 2N2382 PNP germanium epitaxial mesa transistors for highspeed, high-current switching applications. CASE 31 (TO-5) Collactor connectad to casa MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA ; 25°C Derate above 25°C Total Device Dissipation @ TC ; 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N2381 2N2382 VCEO VCB VEB IC PD PD TJ , Tstg 15 20 30 45 4.0 4.0 500 300 4.0 750 10 -65 to + 100 Unit Vdc Vdc Vdc mAdc mW mW/oC mW mW/oC °c FIGURE 1 - ACTIVE REGION TIME CONSTANT FIGURE 2 - TOTAL CONTROL CHARGE 4 JTJ 25°C g.,'"., 3000 ::> ~ o ~ 1000 TJ = 25°C ~I=IO I, / /' ./ ~ " - ......... """ - ....-~".,..
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