2N2405 - NPN silicon annular transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N2405
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	105.23 KB
Description	NPN silicon annular transistors
Datasheet	2N2405 Datasheet

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Part Number	Description
2N2410	NPN.silicon annular transistor
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Full PDF Text Transcription (Reference)

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1893 2N (SILICON) 2N240S NPN silicon annular transistors designed for mediumpower amplifier and switching applications. CASE 31 (TO-5) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25"C Derate above 25"C Total Device Dissipation @ TC - 25"C Derate above 25"C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCS VES IC PD PD T J' T stg 2N1893 2N240S Unit 80 90 Vde 100 140 Vde 120 Vde 7.0 Vde 0.5 1.0 Ade 0.8 1.0 4.57 5.71 3.0 5.0 17.2 28.6 -65 to +200 Watt mW/'C Watts mW/'C 'c THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case Thermal Resistance.